Crossbar, Inc., a California based startup company, has announced a breakthrough in non-volatile memory technology that could possibly change the way that consumers store data in smartphones, tablets, and other storage-hungry technology.
The breakthrough is Crossbar’s RRAM technology, which is reported to allow storage capabilities of up to 1 TB on a chip the size of a postage stamp.
What Is RRAM And Why Will It Increase Storage By So Much?
RRAM stands for Resistive Random Access Memory and is considered to be a more advanced take on non-volatile memory technology, or computer memory that retains stored information even when unpowered. Crossbar’s version of RRAM is considered to be a technological breakthrough due to the RRAM’s size and 3-D stacking capabilities.
Crossbar’s RRAM is able to be stacked, one chip on top of the next, in order to double the storage capability of a single chip. This technology is said to have the ability to stack more than two RRAM chips thereby increasing the base storage amount by levels equal to itself.
Benefits of RRAM over competitors
According to a Crossbar press release, the new Crossbar RRAM has five categories in which the new technology is advanced over that of its competitors. These categories are:
- Highest Capacity - Up to 1 Terabyte (TB) of Storage on a Single Chip; Multiple Terabytes with 3D Stacking
- Lowest Power - Extends Battery Life to Weeks, Months or Years
- Highest Performance - 20x Faster Write than NAND flash
- Easiest SOC integration - Simple Stacking on Logic in Standard CMOS at Most Advanced Nodes
- Most Reliable - 10x the Endurance of NAND; Approaching DRAM Reliability
According to Crossbar, the new RRAM chip has already been developed at their commercial fabrication facility and will soon be available to the SoC, or System on Chip, market. Expect the inclusion of Crossbar RRAM technology within specialized applications in the near future.